GT8G103 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 Unit: mmSTROBE ..
GT8G103 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSAPPLICATIONS 3rd Generation Enhancement−Mode Low Saturation Voltage: V = 8 V (Max.) (@I = 15 ..
GT8G121 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G121 STROBE FLASH
GT8G131 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash
GT8G132 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT8G132 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G132 Strobe Flash
GT8G134 , Silicon N Channel IGBT Strobe Flash Applications
HC1-7R8-R , High Current Inductor
HC193 , 4-BIT SYNCHRONOUS UP/DOWN COUNTERS DUAL CLOCK WITH CLEAR
HC193 , 4-BIT SYNCHRONOUS UP/DOWN COUNTERS DUAL CLOCK WITH CLEAR
HC193 , 4-BIT SYNCHRONOUS UP/DOWN COUNTERS DUAL CLOCK WITH CLEAR
HC1-R87-R , High Current Inductor
HC240 , Package Information Datasheet for Mature Altera Devices
GT8G103
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT8G103 STROBE FLASH APPLICATIONS 3rd Generation Enhancement−Mode Low Saturation Voltage: VCE (sat) = 8 V (Max.) (@IC = 150 A) 4.5 V Gate Drive
MAXIMUM RATINGS (Ta = 25°C) Tstg
ELECTRICAL CHARACTERISTICS (Ta = 25°C) These devices are MOS type. Users should follow proper ESD Handling Procedures.
Operating condition of turn-off dv / dt should be lower than 400 V / µs.
Weight: 0.36g
Unit: mm
