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GT60N321
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321 High Power Switching Applications
The 4th Generation FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A) FRD : trr = 0.8 µs (typ.) (di/dt = −20 A/µs) Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A)
Maximum Ratings (Ta ��� � 25°C) �� 0.8 N･m
Equivalent Circuit Unit: mm
Weight: 9.75 g (typ.)
Emitter
Collector
Gate
