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GT60J323
IGBT for soft switching applications
GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J323 Current Resonance Inverter Switching Application Enhancement mode type High speed : tf = 0.16 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) FRD included between emitter and collector Fourth generation IGBT TO-3P(LH) (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Equivalent Circuit Marking Unit: mm
Weight: 9.75 g (typ.)
Gate
Emitter
Collector
Lot No.
Part No. (or abbreviation code)
