GT60J321 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching ApplicationsApplications Enhancement-mode High speed: t = 0.30 µs (typ.) (I = 60 A) f C Low saturat ..
GT60J322 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching ApplicationsApplications Enhancement-mode Low saturation voltage: V = 1.25 V (typ.) (I = 60 A) CE (sa ..
GT60J323 ,IGBT for soft switching applicationsGT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Reso ..
GT60M301 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONSGT60M301f'l'lTAnM'lltn'tHIGH POWER SWITCHING
GT60M302 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONSAPPLICATIONS Unit in mmThe 3rd GenerationFRD Included Between Emitter and CollectorEnhancement-Mode ..
GT60M303 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONSGT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mmHIGH ..
HC151 , 8-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS
HC1-5502B-5 ,EIA/ITU PABX SLIC with 30mA Loop FeedHC-5502BData Sheet February 1999 File Number 2884.5EIA/ITU PABX SLIC with 30mA Loop Feed
HC1-5502B-9 ,EIA/ITU PABX SLIC with 30mA Loop FeedFeaturesThe Intersil SLIC incorporates many of the BORSHT• Capable of 12V or 5V (V +) OperationBfun ..
HC1-5504B-5 ,EIA/ITU PABX SLIC with 40mA Loop FeedHC-5504BData Sheet July 1998 File Number 2886.5EIA/ITU PABX SLIC with 40mA Loop Feed
HC1-5504B-9 ,EIA/ITU PABX SLIC with 40mA Loop FeedFeaturesThe Intersil SLIC incorporates many of the BORSHT functions• Pin for Pin Replacement for th ..
HC1-55536-5 ,Continuously Variable Slope Delta-Demodulator (CVSD)Features Description• All Digital The HC-55536 is a CMOS integrated circuit used to convertserial N ..
GT60J321
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
GT60J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J321 The 4th Generation
Soft Switching Applications Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)
Maximum Ratings (Ta ��� � 25°C)
Equivalent Circuit Unit: mm
Weight: 9.75 g (typ.)
Gate
Emitter
