GT5G103 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 Unit: mm STROBE ..
GT5G131 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash
GT5G134 ,IGBT for strobe flashAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25, unless otherwise specified) , unless ot ..
GT5J301 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSAPPLICATIONS The 3rd Generation Enhancement−Mode High Speed : t = 0.30µs (Max.) (I = 5A) f ..
GT60J321 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching ApplicationsApplications Enhancement-mode High speed: t = 0.30 µs (typ.) (I = 60 A) f C Low saturat ..
GT60J322 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching ApplicationsApplications Enhancement-mode Low saturation voltage: V = 1.25 V (typ.) (I = 60 A) CE (sa ..
HC151 , 8-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS
HC1-5502B-5 ,EIA/ITU PABX SLIC with 30mA Loop FeedHC-5502BData Sheet February 1999 File Number 2884.5EIA/ITU PABX SLIC with 30mA Loop Feed
HC1-5502B-9 ,EIA/ITU PABX SLIC with 30mA Loop FeedFeaturesThe Intersil SLIC incorporates many of the BORSHT• Capable of 12V or 5V (V +) OperationBfun ..
HC1-5504B-5 ,EIA/ITU PABX SLIC with 40mA Loop FeedHC-5504BData Sheet July 1998 File Number 2886.5EIA/ITU PABX SLIC with 40mA Loop Feed
HC1-5504B-9 ,EIA/ITU PABX SLIC with 40mA Loop FeedFeaturesThe Intersil SLIC incorporates many of the BORSHT functions• Pin for Pin Replacement for th ..
HC1-55536-5 ,Continuously Variable Slope Delta-Demodulator (CVSD)Features Description• All Digital The HC-55536 is a CMOS integrated circuit used to convertserial N ..
GT5G103
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT5G103 STROBE FLASH APPLICATIONS 3rd Generation High Input Impedance Low Saturation Voltage : VCE (sat) = 8 V (Max.) (IC = 130 A) Enhancement−Mode 4.5 V Gate Drive
MAXIMUM RATINGS (Ta = 25°C)
ELECTRICAL CHARACTERISTICS (Ta = 25°C) This transistor is an electrostatic sensitive device. Please handle with caution.
Weight: 0.36 g
Unit: mm
