GT50J328 ,Discrete IGBTabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
GT5G103 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 Unit: mm STROBE ..
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GT5G134 ,IGBT for strobe flashAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25, unless otherwise specified) , unless ot ..
GT5J301 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSAPPLICATIONS The 3rd Generation Enhancement−Mode High Speed : t = 0.30µs (Max.) (I = 5A) f ..
GT60J321 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching ApplicationsApplications Enhancement-mode High speed: t = 0.30 µs (typ.) (I = 60 A) f C Low saturat ..
HC151 , 8-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS
HC1-5502B-5 ,EIA/ITU PABX SLIC with 30mA Loop FeedHC-5502BData Sheet February 1999 File Number 2884.5EIA/ITU PABX SLIC with 30mA Loop Feed
HC1-5502B-9 ,EIA/ITU PABX SLIC with 30mA Loop FeedFeaturesThe Intersil SLIC incorporates many of the BORSHT• Capable of 12V or 5V (V +) OperationBfun ..
HC1-5504B-5 ,EIA/ITU PABX SLIC with 40mA Loop FeedHC-5504BData Sheet July 1998 File Number 2886.5EIA/ITU PABX SLIC with 40mA Loop Feed
HC1-5504B-9 ,EIA/ITU PABX SLIC with 40mA Loop FeedFeaturesThe Intersil SLIC incorporates many of the BORSHT functions• Pin for Pin Replacement for th ..
HC1-55536-5 ,Continuously Variable Slope Delta-Demodulator (CVSD)Features Description• All Digital The HC-55536 is a CMOS integrated circuit used to convertserial N ..
GT50J328
Discrete IGBT
GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J328 Current Resonance Inverter Switching Application
Fourth Generation IGBT Enhancement mode type High speed : tf = 0.1 μs (Typ.) Low saturation voltage : VCE (sat) = 2.0 V (Typ.)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Equivalent Circuit Marking Note 1: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of
Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of
the use of certain hazardous substances in electrical and electronic equipment.
Unit: mm
Weight: 4.6 g (typ.)
Gate
Emitter
Collector
Lot No.
Note 1
Part No. (or abbreviation code)
50J328TOSHIBA
