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GT50J325 |GT50J325TOSHIBA N/a5000avaiInsulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications


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GT50J325
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J325

High Power Switching Applications
Fast Switching Applications The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.) Low switching loss : Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) Low saturation Voltage: VCE (sat) = 2.0 V (typ.) FRD included between emitter and collector
Maximum Ratings (Ta �
�� � 25°C) Tstg
Thermal Characteristics

Equivalent Circuit

Unit: mm
Weight: 9.75 g
Gate
Emitter
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