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GT50J322 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONSGT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mmTHE 4 ..
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GT50J328 ,Discrete IGBTabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
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HC151 , 8-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS
HC1-5502B-5 ,EIA/ITU PABX SLIC with 30mA Loop FeedHC-5502BData Sheet February 1999 File Number 2884.5EIA/ITU PABX SLIC with 30mA Loop Feed
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HC1-5504B-5 ,EIA/ITU PABX SLIC with 40mA Loop FeedHC-5504BData Sheet July 1998 File Number 2886.5EIA/ITU PABX SLIC with 40mA Loop Feed
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HC1-55536-5 ,Continuously Variable Slope Delta-Demodulator (CVSD)Features Description• All Digital The HC-55536 is a CMOS integrated circuit used to convertserial N ..
GT50J322
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT50J322 THE 4TH GENERATION
CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs (Typ.) (IC = 50A) Low Saturation Voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A)
MAXIMUM RATINGS (Ta = 25°C)
EQUIVALENT CIRCUIT Weight: 9.75 g
Unit: mm