GT50J121 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance R 0.521 °C/W th (j-c) 1 ..
GT50J301 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSGT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mmHIGH ..
GT50J322 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONSGT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mmTHE 4 ..
GT50J325 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsApplications th The 4 generation Enhancement-mode Fast switching (FS): Operating frequen ..
GT50J328 ,Discrete IGBTabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
GT5G103 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 Unit: mm STROBE ..
HC151 , 8-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS
HC1-5502B-5 ,EIA/ITU PABX SLIC with 30mA Loop FeedHC-5502BData Sheet February 1999 File Number 2884.5EIA/ITU PABX SLIC with 30mA Loop Feed
HC1-5502B-9 ,EIA/ITU PABX SLIC with 30mA Loop FeedFeaturesThe Intersil SLIC incorporates many of the BORSHT• Capable of 12V or 5V (V +) OperationBfun ..
HC1-5504B-5 ,EIA/ITU PABX SLIC with 40mA Loop FeedHC-5504BData Sheet July 1998 File Number 2886.5EIA/ITU PABX SLIC with 40mA Loop Feed
HC1-5504B-9 ,EIA/ITU PABX SLIC with 40mA Loop FeedFeaturesThe Intersil SLIC incorporates many of the BORSHT functions• Pin for Pin Replacement for th ..
HC1-55536-5 ,Continuously Variable Slope Delta-Demodulator (CVSD)Features Description• All Digital The HC-55536 is a CMOS integrated circuit used to convertserial N ..
GT50J121
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J121 High Power Switching Applications
Fast Switching Applications The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.) Low switching loss : Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) Low saturation Voltage: VCE (sat) = 2.0 V (typ.)
Maximum Ratings (Ta ��� � 25°C) Tstg
Thermal Characteristics Rth (j-c) 0.521
Unit: mm
Weight: 9.75 g
