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GT40T301 from TOSHIBA

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15.625ms

GT40T301

Manufacturer: TOSHIBA

Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications

Partnumber Manufacturer Quantity Availability
GT40T301 TOSHIBA 3000 In Stock

Description and Introduction

Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications The GT40T301 is a power transistor manufactured by TOSHIBA. Below are its key specifications:  

- **Type**: NPN Silicon Epitaxial Planar Transistor  
- **Usage**: Power amplification and switching applications  
- **Collector-Base Voltage (VCBO)**: 400V  
- **Collector-Emitter Voltage (VCEO)**: 400V  
- **Emitter-Base Voltage (VEBO)**: 7V  
- **Collector Current (IC)**: 6A  
- **Total Power Dissipation (PTOT)**: 40W  
- **Junction Temperature (Tj)**: 150°C  
- **Storage Temperature (Tstg)**: -55°C to +150°C  
- **Package**: TO-220  

These specifications are based on TOSHIBA's datasheet for the GT40T301 transistor.

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