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GT40T101
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS
GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE
GT40T101 HIGH POWER SWITCHING APPLICATIONS Enhancement−Mode High Speed : tf = 0.4 µs (Max.) (IC = 40 A) Low Saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A)
MAXIMUM RATINGS (Ta = 25°C)
ELECTRICAL CHARACTERISTICS (Ta = 25°C) Rth (j−c)
Weight: 9.75g
Unit: mm
