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GT40Q321
Injection Enhanced Gate Transistor Silicon N Channel IEGT Voltage Resonance Inverter Switching Application
GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT
GT40Q321 Voltage Resonance Inverter Switching Application The 5th generation Enhancement-mode High speed : tf = 0.41 µs (typ.) (IC = 40A) Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A) FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Thermal Characteristics
Equivalent Circuit Unit: mm
Weight: 4.6 g (typ.)
Gate
Emitter
