GT30J322 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONSAPPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : t = 0 ..
GT30J322 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONSGT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 Unit: mmTHE 4 ..
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GT30J322
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J322 THE 4TH GENERATION
CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs (Typ.) (IC = 50A) Low Saturation Voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A)
MAXIMUM RATINGS (Ta = 25°C)
EQUIVALENT CIRCUIT Weight: 5.8g
Unit: mm
