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GT30J311
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J311 HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) FRD included between Emitter and Collector
MAXIMUM RATINGS (Ta = 25°C)
EQUIVALENT CIRCUIT Weight: 3.65g
Unit: mm
