GT30J301 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsGT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mmHIGH ..
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GT30J301
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J301 HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) FRD included between Emitter and Collector
MAXIMUM RATINGS (Ta = 25°C)
EQUIVALENT CIRCUIT Weight: 4.6g
Unit: mm
