GT30J121 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsApplications The 4th generation Enhancement-mode Fast switching (FS): Operating frequen ..
GT30J122 ,Discrete IGBTabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
GT30J301 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsGT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mmHIGH ..
GT30J311 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsAPPLICATIONS The 3rd Generation Enhancement−Mode High Speed : t = 0.30µs (Max.) fLow Satu ..
GT30J322 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONSAPPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : t = 0 ..
GT30J322 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONSGT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 Unit: mmTHE 4 ..
HC005A0F1-SZ , 18-36Vdc & 36-75Vdc Input; 1.0V-5Vdc Output; 4A - 6A Output Current
HC05 ,High-density complementary metal oxide semiconductor (HCMOS) microcontroller unitMC68HC05X16 TECHNICAL DATA MC68HC05X16/DRev. 1HC05MC68HC05X16MC68HC05X32MC68HC705X32TECHNICALDA ..
HC109 , Dual J-K Flip-Flop with Set and Reset
HC109 , Dual J-K Flip-Flop with Set and Reset
HC109 , Dual J-K Flip-Flop with Set and Reset
HC1-1R0-R , High Current Inductor
GT30J121
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J121 High Power Switching Applications
Fast Switching Applications The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.) Low switching loss : Eon = 1.00 mJ (typ.)
: Eoff = 0.80 mJ (typ.) Low saturation voltage: VCE (sat) = 2.0 V (typ.)
Maximum Ratings (Ta = 25°C) Tstg
Thermal Characteristics Rth (j-c) 0.735
Unit: mm
Weight: 4.6 g (typ.)
