GT25Q301 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications The 3rd generation Enhancement-mode High speed: t = 0.32 µs (max) f Low ..
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GT25Q301
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT25Q301 High Power Switching Applications
Motor Control Applications The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector
Maximum Ratings (Ta = 25°C) Tstg −55 to 150
Equivalent Circuit Unit: mm
Weight: 9.75 g (typ.)
Gate
Emitter
