GT25Q101 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsTOSHIBA GT25Q101GT7E01n1HIGH POWER SWITCHING
GT25Q101 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsAPPLICATIONS20.5MAX. 3.3 $0.2 I0 High Input Impedance26.0 i 0.50 High Speed : tf= 0.5 ps (Max.)0 Lo ..
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GT25Q101
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA GT25Q101
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT
GT25triil
HIGH POWER SWITCHING APPLICATIONS Unit in mm
MOTOR CONTROL APPLICATIONS
20.5MAX. gi3.3 t 0.2
0 High Input Impedance -sessilst 3
0 High Speed : tf = 0.5 ,us (Max.) c, D “:ngIE
0 Low Saturation Voltage : VCE (sat) = 4.0V (Max.) NI I 0 I F
0 Enhancement-Mode
5.451015 5.45:0.15
. 20.0: 0.6
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT 39 'd
Collector-Emi; Voltage VCES 1200 V E. rm'
Gate-Emitter Voltage VGES i 20 V
DC I 25 l. GATE
Collector Current C A 2. COLLECTOR (HEAT SINK)
lms ICP 50 3. EMITTER
Collector Power Dissipation JEDEC -
P 200 W
(Tc=25°C) C JEITA -
Junction Temperature Tj 150 "C TOSHIB A 2-21F1C
Storage Temperature Range Tstg -55--150 °C Weight : 9.75 g
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = :20 V, VCE = 0 - - i500 nA
Collector CU-off Current ICES VCE = 1200 V, VGE = 0 - - 1.0 mA
Gate-Emitter Cut-off Voltage VGE (OFF) 10 = 25 mA, VCE = 5 V 3.0 - 6.0
Collector-Emi; - -
Saturation Voltage VCE (sat) IC - 25 A, VGE - 15V - 3.0 4.0
Input Capacitance Cies VCE = 10V, VGE = 0, f = 1 MHz - 3200 - pF
Rise Time tr VOUT - 0.2 0.6
Switching Turn-on Time ton ‘79in E; - 0.3 0.8
. . 15 V 51 Q N ps
Time Fall Time tf 0 V - 0.3 0 5
- 15 V
Turn-off Time toff VCC = 600V - 0.8 1.5
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TOSHIBA GT25Q101
IC - VCE VCE - VGE
COMMON EMITTER
Te = 25°C
COMMON EMITTER
Tc = -40T
PC = 200W
COLLECTOR CURRENT 10 (A)
COLLECTOR—EMITTER VOLTAGE VCE
0 2 4 6 8 10 0 4 8 12 16 20
C0LLECT0R-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE VCE - VGE
COMMON EMITTER
Tc = 25°C
COMMON EMITTER
To = 125''C
COLLECTOR—EMITTER VOLTAGE VCE (V)
COLLECTOR—EMIT’I‘ER VOLTAGE VCE (V)
0 4 8 12 16 20 o 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VGE (V)
IC - VGE VCE, VGE - QG
COMMON EMITTER - COMMON EMITTER S
2 VCE = 5 v tl RL = 24 Q v
v > Tc = 25°C 8
S? m 600 =
V2 0 <1
iii > S
D td 400 o
0 I‘d >
M E3 g
0 Te = 125''C 3 Fe
o 's? -
3 g 200 E
g P ah
0 2 4 6 8 10 12 14 o 40 so 120 160 200
GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC)
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TOSHIBA
GT25Q101
SWITCHING TIME (/15)
CAPACITANCE C (pF)
10 (A)
COLLECTOR CURRENT
SWITCHING TIME - IC
COMMON EMITTER
vac = 300 v, Tc = 25°C
0.5 VGG = uF15 v, RG = 100 Q
0.3 off
0 5 10 15 20 25
COLLECTOR CURRENT IC (A)
C - VCE
30 COMMON EMITTER Ores
1 3 10 30 100 300 1000
c0LLEcT0R-EMITTER VOLTAGE VCE (V)
SAFE OPERATING AREA
.)k. SINGLE NONREPETITIVE PULSE Te = 25''C
CURVES MUST BE DELATED LINEARLY WITH
INCREASE IN TEMPERATURE.
100, .W.. ll 'rlllr1 l
310 MAX.(PULSED) .)k. Hm l
50 ililiiiii ii cN (llll _
30 IC MAX.(CONTINUOUS) N, 50 Ms lk. -
_ tw'; l CN
1 ms .)k. S:
10 _ _ _ _
DC OPERATION N 100 As .)k.
1 3 10 30 100 300 1000 3000
c0LLEcT0R-EMITTER VOLTAGE VCE (V)
SWITCHING TIME - RG
COMMON EMITTER
VCC = 300 V
VGG = i 15 V
10 = 25A
Tc = 25''C
SWITCHING TI ME (/15)
10 30 50 100 300 500 1000
GATE RESISTANCE RG (Q)
2 Rth(t) - tw
'til, 101
ad E 0 Tc = 25 C
<53 10
:1: 2i IO-I
P, 10-2
e IO-s
PULSE WIDTH tw (s)
REVERSE BIAS SOA
'tlj" 30
3 0.3 Tj s 125''C
8 0.1 VGE = i15V
RG = 100 Q
0 100 200 300 400 500 600 700
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA GT25Q101
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2003-03-12
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