GT25J101 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsAPPLICATIONS15.9MAX9).” 10.10.! m.|0 High Input Impedance0 High Speed : tf=0.35,us (Max.)0 Low Satu ..
GT25Q101 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsTOSHIBA GT25Q101GT7E01n1HIGH POWER SWITCHING
GT25Q101 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsAPPLICATIONS20.5MAX. 3.3 $0.2 I0 High Input Impedance26.0 i 0.50 High Speed : tf= 0.5 ps (Max.)0 Lo ..
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HBR1105W , Single Color 3216 Dome Lenz Type
HBS100ZG-A ,One - HBS SERIES - 100 WATT
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GT25J101
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA GT251101
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT
GiT25rii01
HIGH POWER SWITCHING APPLICATIONS Unit in mm
MOTOR CONTROL APPLICATIONS
15.9MAX 43.2t0.2
0 High Input Impedance -.--_
20.0 £03
0 High Speed : tf=0.35ps (Max.) " - SI
0 Low Saturation Voltage : VCE (sat)=4.0V (Max.)
0 Enhancement-Mode
20.5 10.5
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT co,
Collector-Emi; Voltage VCES 600 V 415
Gate-Emitter Voltage VGES i- 20 V
DC I 25 l. GATE
Collector Current C A 2. COLLECTOR (HEAT SINK)
lms ICP 50 3. EMITTER
Collector Power Dissipation JEDEC -
P 150 W
(Tc=25°C) C JEITA -
J unction Temperature Tj 150 "C TOSHIB A 2-16C1C
Storage Temperature Range Tstg -55--150 °C Weight : 4.6g
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = i' 20V, VCE = 0 - - i' 500 nA
Collector CU-off Current ICES VCE =600V, VGE=0 - - 1.0 mA
Gate-Emitter Cut-off Voltage VGE (OFF) 10 =25mA, VCE =5V 3.0 - 6.0
Collector-Emi; - -
Saturation Voltage VCE (sat) IC - MA, VGE - 15V - 3.0 4.0
Input Capacitance Cies VCE = 10V, VGE = 0, f = 1MHz - 1400 - pF
Switching Turn-on Time ton VOIN hAf I E - 0.40 0.80
. 15V 1000 H #8
Time Fall Time tf 0V - 0.15 0.35
Turn-off Time toff VCC = 300V - 0.50 1.00
1 2002-02-06
TOSHIBA
GT251101
COLLECTOR CURRENT 10 (A)
COLLECTOR—EMITTER VOLTAGE VCE (V)
10 (A)
COLLECTOR CURRENT
IC - VCE
COMMON EMITTER
Tc = 25°C
2 4 6 8 10
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE - VGE
MMON EMITTER
c=25°C
IC=10A
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
IC - VGE
COMMON EMITTER
VCE =5V
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR—EMITTER VOLTAGE VCE
COLLECTOR—EMITTER VOLTAGE VCE (V)
COLLECTOR—EMITTER VOLTAGE VCE
VCE - VGE
MMON EMITTER
c= -40''C
IC=10A
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE
MMON EMITTER
c = 125°C
Ic=10A
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
VCE, VGE - QG
COMMON EMITTER VCE=0v
RL=12Q
Tc=25°C
20 40 60 80 100
GATE CHARGE QG (nC)
GATE-EMITTER VOLTAGE VGE (V)
TOSHIBA GT251101
SWITCHING TIME - IC SWITCHING TIME - RG
COMMON EMITTER COMMON EMITTER
vcc=3oov, Tc=25°C vCC--300V
A -+15V =100Q "ii? VGG=i15V
g 0.5 VGG--* ' RG-- 3 10:25A
t m Tc=25°C
E 0.3 off if,
0.05 10 30 50 100 300 500 1000
0 5 10 15 20 25
GATE RESISTANCE RG (Q)
COLLECTOR CURRENT IC (A)
C - VCE 2 Rth(t) - tw
5000 m 10
3000 :23
r: E 10
e 1000 EE Tc=25°C
D 500 EB 10
8 300 g a
E = 510‘1
F tii'
3 100 2;
g r,'',-',, 10-2
o 50 z
30 COMMON EMITTER Cres g 3
yo =0 F IO-
'lPhhl, 10-4
10 Tc=25°C S
1 3 10 30 100 300 1000 PUL EWIDTH tw (s)
c0LLEcT0R-EMITTER VOLTAGE VCE (V)
SAFE OPERATING AREA REVERSE BIAS SOA
100_ 1 11111111 I 1111 100
:10 MAX.(PULSED)ht l l l l
2 60 1 l 1 111111 1 , "N 50prsk'4 LTL" 'tlj" 30
' 30 IC MAX.(CONTINUOUS) _ _
S? , I 'y, "hs. S? 10
E! 'ss, Ims8 ss,? N "N F
R; 10 I I . he Z
w = N 1 1 'x _ g 3
5 :DC OPERATION "s 100pesyf N . n:
D I I I 1 l I Ill h D
o 1 1 1 1 lllll A , O 1
g 3 X SINGLE N 'N g
E5 NONREPETITIVE \ ' t
E PULSE Tc=25°C N, N 3 0.3 Tis 125''C
'a 1 CURVES MUST BE g +
8 DERATED LINEARLY _ o 0.1 VGE= t15V
0 5 WITH INCREASE IN N Rc--100n
. TEMPERATURE. h 0 03
"I 3 5 10 30 50 100 300 500 1000 . 0 100 200 300 400 500 600 700
c0LLEcT0R-EMITTER VOLTAGE VCE (V) C0LLECT0R-EMITTER VOLTAGE VCE (V)
3 2002-02-06
TOSHIBA GT251101
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2002-02-06
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