GT25G101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSGT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mmSTR ..
GT25G102 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONSAPPLICATIONS High Input Impedance Low Saturation Voltage : V = 8V (Max.) (I = 150A) CE (sat) ..
GT25J101 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsAPPLICATIONS15.9MAX9).” 10.10.! m.|0 High Input Impedance0 High Speed : tf=0.35,us (Max.)0 Low Satu ..
GT25Q101 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsTOSHIBA GT25Q101GT7E01n1HIGH POWER SWITCHING
GT25Q101 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsAPPLICATIONS20.5MAX. 3.3 $0.2 I0 High Input Impedance26.0 i 0.50 High Speed : tf= 0.5 ps (Max.)0 Lo ..
GT25Q102 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching ApplicationsApplications Unit: mm The 3rd Generation Enhancement-Mode High Speed: t = 0.32 µs (max) ..
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HC005A0F1-SZ , 18-36Vdc & 36-75Vdc Input; 1.0V-5Vdc Output; 4A - 6A Output Current
HC05 ,High-density complementary metal oxide semiconductor (HCMOS) microcontroller unitMC68HC05X16 TECHNICAL DATA MC68HC05X16/DRev. 1HC05MC68HC05X16MC68HC05X32MC68HC705X32TECHNICALDA ..
GT25G101
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
GT25G101 STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat)=8V (Max.) (IC=170A) Enhancement−Mode 20V Gate Drive
MAXIMUM RATINGS (Ta=25°C)
ELECTRICAL CHARACTERISTICS (Ta=25°C) Rth (j−c)
Weight : 1.5g
Unit in mm
