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GT20J321
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT High Power Switching Applications Fast Switching Applications
GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
GT20J321 High Power Switching Applications
Fast Switching Applications The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.04 µs (typ.)
Low switching loss : Eon = 0.40 mJ (typ.)
: Eoff = 0.43 mJ (typ.) Low saturation voltage: VCE (sat) = 2.0 V (typ.) FRD included between emitter and collector
Maximum Ratings (Ta = 25°C) Tstg
Thermal Characteristics
Equivalent Circuit Unit: mm
Weight: 1.7 g (typ.)
Gate
Emitter
