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GT15Q311
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
GT15Q311 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15Q311 High Power Switching Applications
Motor Control Applications The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector
Maximum Ratings (Ta = 25°C) Tstg −55 to 150
Equivalent Circuit Unit: mm
Weight: 3.65 g (typ.)
Gate
Emitter
