GT10J321 ,TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBTApplications● The 4th generation● Enhancement-mode● Fast Switching(FS) :Operating frequency up to 1 ..
GT15J301 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsGT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mmHIGH ..
GT15J301 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsAPPLICATIONS The 3rd Generation Enhancement−Mode High Speed : t = 0.30µs (Max.) (I = 15A) f ..
GT15J321 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsApplications The 4th generation FS (fast switching) Enhancement-mode High speed: t = ..
GT15J321. ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching ApplicationsGT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Sw ..
GT15Q101 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSTOSHIBA GT15Q101GT1E01n1HIGH POWER SWITCHING
HBF4522D ,Sincerity Mocroelectronics - NPN TRIPLE DIFFUSION PLANAR TRANSISTOR
HBFP-0405 , High Performance Isolated Collector Silicon Bipolar Transistor
HBFP-0420 ,High Performance Isolated Collector Silicon Bipolar TransistorFeatures Surface Mount Plastic Description• Ideal for High Gain, Low Hewlett Packard’s HBFP-0420 is ..
HBFP-0420-TR1 ,High Performance Isolated Collector Silicon Bipolar TransistorHigh Performance IsolatedCollector Silicon BipolarTransistorTechnical DataHBFP-0420
HBFP0420-TR1 ,High Performance Isolated Collector Silicon Bipolar TransistorApplicationsThis product is based on a 25 GHz• LNA, Oscillator, DriverEmitter Collectortransition f ..
HBFP-0420-TR2 ,High Performance Isolated Collector Silicon Bipolar TransistorApplications high performance isolatedOutline 4Tcollector silicon bipolar junction• Transition Freq ..
GT10J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
TOSHIBATOSHIBATOSHIBATOSHIBA GT10J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
GT10J321High Power Switching Applications
Fast Switching Applications The 4th generation Enhancement-mode Fast Switching(FS) :Operating frequency up to 150kHz(Reference) High speed :tf=0.03μs(typ.) Low switching loss :Eon=0.26mJ(typ.)
:Eoff=0.18mJ(typ.) Low saturation voltage :VCE(sat)=2.0V(typ.) FRD included between emitter and collector
Maximum Ratings (Ta=25℃)Maximum Ratings (Ta=25℃)Maximum Ratings (Ta=25℃)Maximum Ratings (Ta=25℃)
