GT10J301 ,INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSAPPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. : t = 0.30µs (Max.) fLow S ..
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GT15J301 ,Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsAPPLICATIONS The 3rd Generation Enhancement−Mode High Speed : t = 0.30µs (Max.) (I = 15A) f ..
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GT10J301
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
GT10J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT10J301 HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. : tf = 0.30µs (Max.) Low Saturation Voltage. : VCE (sat) = 2.7V (Max.) FRD included between Emitter and Collector.
MAXIMUM RATINGS (Ta = 25°C)
EQUIVALENT CIRCUIT Weight: 4.6 g
Unit: mm
