GBPC1510W ,Bridge RectifiersFeatures• Integrally molded heatsink provided very low thermal resistance for maximum heat dissipat ..
GBPC1510W ,Bridge RectifiersGBPC 12, 15, 25, 35 SERIES Bridege Rectifiers (Glass Passivated)GBPC 12, 15, 25, 35 SERIES Bridege ..
GBPC2508 ,SINGLE PHASE SILICON PASSIVATED BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:25A
GBPC2508W ,Bridge Rectifiers02-Dec-04 3Instantaneous Forward Current (A)Peak Forward Surge Current (A)Average Power Dissipation ..
GBPC2508W ,Bridge Rectifiers Document Number 886122 02-Dec-04Average Forward Current (A)Average Forward Current (A)GBPC12, 15, ..
GBPC2510 ,SINGLE PHASE SILICON PASSIVATED BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:25A
GS74108J-12I , 512K x 8 4Mb Asynchronous SRAM
GS74108J-15 , 512K x 8 4Mb Asynchronous SRAM
GS74108J-15I , 512K x 8 4Mb Asynchronous SRAM
GS74108J-8 , 512K x 8 4Mb Asynchronous SRAM
GS74108J-8I , 512K x 8 4Mb Asynchronous SRAM
GS74108TP-10 , 512K x 8 4Mb Asynchronous SRAM
GBPC1504W-GBPC1508W-GBPC1510W-GBPC2510W-GBPC3506W-GBPC3508W-GBPC3510W
12A Bridge Rectifier
GBPC 12, 15, 25, 35 SERIES Bridege Rectifiers (Glass Passivated) GBPC 12, 15, 25, 35 SERIES Bridege Rectifiers (Glass Passivated) Features • Integrally molded heatsink provided very low thermal resistance for maximum heat dissipation. • Surge ovrload rartings from 300 amperes to 400 amperes. • Isolated voltage from case to lead over 2500 volts. • UL certified, UL #E96005 Suffix “W” Wire Lead Structure Suffix “M” Terminal Location Face to Face – ~ +~ ~– ~ + GBPC-W GBPC Absolute Maximum Ratings * T = 25°C unless otherwise noted a Value Symbol Parameter Units 005 010204 06 0810 V Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V RRM V Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V RMS V DC Reverse Voltage (Rated V ) 50 100 200 400 600 800 1000 V R R I Average Recitified Forward Current F(AV) @ T = 55°C GBPC12 12 A A GBPC15 15 A GBPC25 25 A GBPC35 35 A I Non-Repetitive Peak Forward Surge Current FSM GBPC12, 25, 25 300 A 8.3ms Single Half-Sine-Wave GBPC35 400 A T Storage Temperature Range -55 to +150 °C STG T Operating Junction Temperature -55 to +150 °C J * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 83.3 W D R Thermal Resistance, Junction to Lead 1.5 °C/W θJL ©2004 1 GBPC 12, 15, 25, 35 SERIES Rev. C1
