GA75TS60U ,600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V Generation 4 IGBT technology CES UltraFast: Optimized for high operating frequ ..
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GA75TS60U
600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
PD -50050D
International
TOR Rectifier GA75TS60U
"HALF-BRIDGE" IGBT INT-A-PAK Ultra-Fastm Speed IGBT
Features
. Generation 4 IGBT technology 1 VCES = 600V
. UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200 3
kHz in resonant mode T T
. Very low conduction and switching losses 4 5 6 7
. HEXFRED"' antiparallel diodes with ultra- soft @VGE = 15V, lc = 75A
recovery
. Industry standard package
. UL approved
VCE(on) typ. = 1.7V
Benefits
. Increased operating efficiency
. Direct mounting to heatsink
. Performance optimized for power conversion: UPS,
SMPS, Welding
. Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter Max. Units
I/ces Collector-to-Emitter Voltage 600 V
lc © Tc = 25°C Continuous Collector Current 75
ICM Pulsed Collector Current. 150 A
ILM Peak Switching Current, 150
IFM Peak Diode Forward Current 150
I/ss Gate-to-Emitter Voltage 120 V
VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500
Po @ Tc = 25°C Maximum Power Dissipation 285 W
Pro @ Tc = 85°C Maximum Power Dissipation 150
TJ Operating Junction Temperature Range -40 to +150 ''C
TSTG Storage Temperature Range MO to +125
Thermal I Mechanical Characteristics
Parameter Typ. Max. Units
Rox: Thermal Resistance, Junction-to-Case - IGBT - 0.44
Roos Thermal Resistance, Junction-to-Case - Diode - 0.70 “CNV
Recs Thermal Resistance, Case-to-Sink - Module 0.1 -
Mounting Torque, Case-to-Heatsink © - 6.0 N.m
Mounting Torque, Case-to-Terminal 1, 2 & 3 © - 5.0
Weight of Module 200 - g
1
05/20/02
GA75TS60U
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
(SR)CES Collector-to-Emitter Breakdown Voltage 600 - - VGE = 0V, k: = 1mA
V0.30”) Collector-to-Emitter Voltage - 1.7 2.2 VGE = 15V, Ic = 75A
- 1.76 - V VGE = 15V, lc = 75A, To = 125°C
VGE(1h) Gate Threshold Voltage 3.0 - 6.0 k: = 0.5mA
AVGEWIATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, IC = 500pA
gfe Forward Transconductance " - 83 - S VCE = 25V, lc = 75A
ICES Collector-to-Emitter Leaking Current - - 1.0 mA VGE = ov, ch = 600V
- - 10 VGE = 0V, VCE = 600V, To = 125°C
VFM Diode Forward Voltage - Maximum - 3.3 - V V = 75A, VGE = 0V
- 3.1 - IF: 75A, VGE = 0V, To =125°C
lees Gate-to-Emitter Leakage Current - - 250 nA VGE = 120V
Dynamic Characteristics - T J = 125°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 340 510 Vcc = 400V, VGE = 15V
Qge Gate - Emitter Charge (turn-on) - 48 72 nC Ic = 75A
Qgc Gate - Collector Charge (turn-on) - 120 170 To = 25°C
tdmn) Turn-On Delay Time - 110 - RG1 = 279, R62 = on,
tr Rise Time - 94 - ns lc = 75A
Mott) Turn-Off Delay Time - 250 - Vcc = 360V
t, Fall Time - 180 - VGE = t151/
Eon Turn-On Switching Energy - 1.95 - mJ
Eoff(1) Turn-Off Switching Energy - 4.4 -
Ets (1) Total Switching Energy - 6.35 12.6
Cies Input Capacitance - 7880 - VGE = 0V
Goes Output Capacitance - 770 - pF Vcc = 30V
Cres Reverse Transfer Capacitance - 98 - f = 1 MHz
trr Diode Reverse Recovery Time - 133 - ns Ic = 75A
|rr Diode Peak ReverseCurrent - 94 - A RG1 = 279
G, Diode Recovery Charge - 6274 - nC RG2 = on
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 2061 - Alps Vcc = 360V
During h, di/dt =1300Alps
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