GA1L4Z ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL
Collector Cutoff Current
DC Curr ..
GA1L4Z-T1 ,Hybrid transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL
Collector Cutoff Current
DC Curr ..
GA1L4Z-T2 ,Hybrid transistorFEATURES,
PACKAGE DIMENSIONS i,,' o Resistor Built-in TYPE C
in millimeters 'i,,. B
2.1K0.1 _,) ..
GA200HS60S ,600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600VCES • Generation 4 IGBT TechnologyV = 1.19V @CE(on) typ. • Standard speed: optimize ..
GA201 , SCRs Nanosecond Switching, Planar
GA210 , Absolute encoders - parallel
GRM32DR71E106KA12L , CHIP MONOLITHIC CERAMIC CAPACITOR
GRM32ER60J107M , 60-A, 3.3/5-V INPUT, NONISOLATED WIDE-OUTPUT ADJUST POWER MODULE
GRM32ER61A226KA65L , CHIP MONOLITHIC CERAMIC CAPACITOR
GRM32ER61A226KA65L , CHIP MONOLITHIC CERAMIC CAPACITOR
GRM32ER61A476KE20L , CHIP MONOLITHIC CERAMIC CAPACITOR
GRM32ER61C226ME20L , φ180, 330mm Embossed taping
GA1L4Z
