GA150KS61U ,600V UltraFast 10-30 kHz Ls Chop S IGBT in a INT-A-Pak packageFeatures3 Generation 4 IGBT technologyV = 600VCES UltraFast: Optimized for high operating1 freq ..
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GA150KS61U
600V UltraFast 10-30 kHz Ls Chop S IGBT in a INT-A-Pak package
PD -94346
International
TOR lectifier GA150KS6'l U
IGBT INT-A-PAK Low Side Switch Chopper Module
Ultra-FastTM Speed IGBT
Features
. Generation 4 IGBT technology ar VCES = 600V
. UltraFast: Optimized for high operating _ 1
frequencies 8-40 kHz in hard switching, >200 -
kHz in resonant mode 6 --e VcE(on) typ. - 1.7V
. Very low conduction and switching losses
. HEXFRED"' antiparallel diodes with ultra- soft 7 - @VGE= 15V, lc = 150A
recovery ' 2
. Industry standard package
. UL approved
Benefits
. Increased operating efhciency
. Direct mounting to heatsink
. Performance optimized for power conversion: UPS,
SMPS, Welding
. Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter Max. Units
VCEs Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 150
ICM Pulsed Collector Current© 300 A
ILM Peak Switching Current© 300
IFM Peak Diode Forward Current 300
I/ss Gate-to-Emitter Voltage 120 V
VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500
Po @ Tc = 25°C Maximum Power Dissipation 440 W
Pro @ Tc = 85°C Maximum Power Dissipation 230
TJ Operating Junction Temperature Range -40 to +150 "C
TSTG Storage Temperature Range -40 to +125
Thermal I Mechanical Characteristics
Parameter Typ. Mar. Units
Rox: Thermal Resistance, Junction-to-Case - IGBT - 0.28
Roos Thermal Resistance, Junction-to-Case - Diode - 0.35 "CAN
Recs Thermal Resistance, Case-to-Sink - Module 0.1 -
Mounting Torque, Case-to-Heatsink - 4.0 N.m
Mounting Torque, Case-to-Terminal 1, 2 & 30) - 3.0
Weight of Module 200 - g
1
1 1/06/01
GA150KSG1 U
International
IEBR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmcgs Collector-to-Emitter Breakdown Voltage 600 - - VGE = 0V, lc = 1mA
Vegan) Collector-to-Emitter Voltage - 1.7 2.3 VGE = 15V, Ic = 150A
- 1.7 - V VGE = 15V, Ic = 150A, Tu = 125°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 k: = 750pA
AVGEWIATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, lc = 750pA
gie Forward Transconductance © - 152 - S VCE = 25V, Ic = 150A
ICES Collector-to-Emitter Leaking Current - - 1.0 mA VGE = 0V, VCE = 600V
- - 10 VGE = 0V, VCE = 600V, To = 125°C
VFM Diode Forward Voltage - Maximum - 1.4 2.0 V IF = 150A, VGE = 0V
- 1.4 - V-- 150A, VGE = 0V, To = 125°C
lees Gate-to-Emitter Leakage Current - - 250 nA VGE = A20V
Dynamic Characteristics - T J = 125°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 624 937 Vcc = 400V
Qge Gate - Emitter Charge (turn-on) - 121 182 nC k; = 94A
Qgc Gate - Collector Charge (turn-on) - 212 317 To = 25°C
tum) Turn-On Delay Time - 241 - RG1 = 27n, R62 = on,
tr Rise Time - 145 - ns Ic = 150A
tam) Turn-Off Delay Time - 336 - Vcc = 360V
tf Fall Time - 227 - VGE = i15V
Eon Turn-On Switching Energy - 6.0 - mJ
E0ff(1) Turn-Off Switching Energy - 12 -
Ets (1) Total Switching Energy - 19 33
Cies Input Capacitance - 13878 - VGE = 0V
Coes Output Capacitance - 867 - pF Vcc = 30V
Cres Reverse Transfer Capacitance - 181 - f = 1 MHz
trr Diode Reverse Recovery Time - 139 - ns k: = 150A
Ir, Diode Peak ReverseCurrent - 100 - A RG1 = 279
Gr Diode Recovery Charge - 6938 - nC R62 = on
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 4682 - Alps Vcc = 360V
During tr, di/dt =1400A/ps
2
