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GA100TS60SQ
600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak package
Bulletin I27119 rev.B 06/02
International
IsaR Rectifier GA100TS60SQ
"HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT
Features
. ft1enti,oan, 4 Standard Speed IGBT _ VCES = 600V
- Quiet/R £1¥iparallel diodes with Fast -: lc = 220A DC
. 1sfty"icfvlrgnduction Losses fl VCE(on) typ. = 1 .39V
:tti'iteistgi1r1'2gkage . @ Ic--- 200A TJ = 25°C
UL approved (file E78996)
Benefits
. Optimized for high current inverter
stages (AC TIG welding machines)
Direct mounting to heatsink
Hard switching operation frequency
up to 1 KHz
. Very Iowjunction-to-case thermal
resistance
. Low EMI
INT-A-PAK
Absolute Maximum Ratings
Parameters Max Units
VCEs Collector-to-Emir Voltage 600 V
Ic Continuos Collector Current @ TC = 25''C 220 A
@ TC = 130''C 100
ICM Pulsed Collector Current 440
ILM Peak Switching Current 440
VGE Gate-to-EmitterVoltage , 20 V
VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
Pro Maximum Power Dissipation @ To = 25°C 780 W
@ TC = 100°C 312
1
GA100TS60SQ
Bulletin I27119 rev.B 06/02
International
TOR Ilectifier
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
VBRCES Collector-to-Emil/realign Voltage 600 V VGE = 0V, Ic = 1mA
VCE(on) Collector-to-EmitterVoltage 1.11 1.21 VGE = 15V, Ic = 100A
1.39 k: = 200A
1.08 1.17 VGE=15V, Ic= 100A,To= 125''C
VGE(th) Gate Threshold Voltage 3 6 Ic = 0.25mA
Ices Collector-to-Emiter Leakage 1 mA I/se = 0V, VCE = 600V
Current 10 VGE = 0V, VCE = 600V, To = 125°C
VFM Diode Forward Voltage drop 1.21 1.28 V IC = 100A, VGE = 0V
1.16 1.24 lc--100A,VGE=0V,TJ=125''C
IGEs Gate-to-Emitter Leakage Current , 250 nA VGE = l 20V
Switching Characteristics @ Tg = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
Qg Total Gate Charge 640 700 nC lc = 100A
Qge Gate-Emitter Charge 108 120 Vcc = 400V
Qgc Gate-CollectorCharge 230 300 VGE = 15V
tr Rise Time 0.45 us IC = 100A, VCC = 480V, VGE = 15V
tf Fall Time 1.0 Rg = 15n
Eon Tum-On Mtching Energy 4 6 mJ
Eoff Tum-Off Soitching Energy 23 29
Ets Total Switching Energy 27 35
Eon Tum-On Switching Energy 6 12 mJ Ic = 100A, Vcc = 480V, VGE = 15V
Eoff Turn-Offsite); Energy 35 40 Rg = 15n, T: = 125°C
Ets Total Switching Energy 41 52
Cies Input Capacitance 16250 pF VGE = 0V
Coes Output Capacitance 1040 I/cc = 30V
Cres Reverse Transfer Capacitance 190 f= 1.0 MHz
tn Diode Reverse Recovery Time 440 480 ns IF = 50A, thsldt = 50Alps
Irr Diode Peak Reverse Current 15 18 A VRR = 200V
er Diode Recovery Charge 3400 4000 nC To = 125°C
Thermal- Mechanical Specifications
Parameters Min Typ Max Units
TJ Operating Junction Temperature Range - 40 150 "C
TSTG Storage Temperature Range - 40 125
Rthoc Junction-to-Case per Switch 0.16 ''C/ W
Per Diode 0.48
Rmcs Case-to-Sink Per Module 0.1
T Mounting torque Case to heatsink 4 Nm
Case to terminal 1,2,3 3
Weight 185 g