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GA100NA60U
600V UltraFast 10-30 kHz Single IGBT in a SOT-227 package
International
Tcat, Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. UltraFastTM: Optimized for minimum saturation
PD - 94290
GA100NA60U
Ultra-Fastm Speed IGBT
voltage and operating frequencies up to 40 kHz in 2
hard switching, > 200 kHz in resonant mode
. Very low conduction and switching losses
. Fully isolated package (2,500 Volt AC/RMS)
. Very low internal inductance (s 5 nH typ.)
. Industry standard outline
Benefits
VCES = 600V
@VGE = 15V, Ic = 50A
. Designed for increased operating efficiency in power
conversion: PFC, UPS, SMPS, Welding, Induction heating
. Lower overall losses available at frequencies Ar 20kHz
. Easy to assemble and parallel
. Direct mounting to heatsink
. Lower EMI, requires less snubbing
. PIug-in compatible with other SOT-227 packages
SOT-227
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 100
lc @ Tc = 100°C Continuous Collector Current 50 A
ICM Pulsed Collector Current 200
ILM Clamped Inductive Load Current© 200
VGE Gate-to-Emitter Voltage , 20 V
VISOL RMS Isolation Voltage, Any Terminal to Case, t=1 min 2500
PD @ Tc = 25°C Maximum Power Dissipation 250 W
Po @ Tc = 100°C Maximum Power Dissipation 100
To Operating Junction -55 to + 150
TSTG Storage Temperature Range -55 to + 150 o C
Mounting Torque, 6-32 or M3 Screw 12 Ibf -in(1.3N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case, IGBT - 0.50 0
RM; Thermal Resistance, Junction-to-Case , Diode - 1.0 C/W
Recs Case-to-Sink, Flat, Greased Surface 0.05 -
Wt Weight of Module 30 - gm
1
7/27/01
GA100NA60U
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage© 600 - - V VGE = 0V, Ic = 250PA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.36 - V/°C VGE = 0V, Io = 1.0mA
Vcaon) Collector-to-Emir Saturation Voltage - 1.49 2.1 k: = 50A VGE = 15V
- 1.80 - V lc = 100A See Fig. 1, 4
- 1.47 - Ic = 50A, TJ = 150°C
VGE(m) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -7.6 - mV/°C VCE = VGE, Ic = 250pA
gfe Forward Transconductance (E) 34 52 - S VCE = 100V, lc = 50A
Ices Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1.3 mA VGE = 0V, VCE = 600V, To = 150°C
VFM Diode Forward Voltage Drop - 1.3 1.6 V Ic = 50A See Fig. 12
- 1.16 1.3 |c=50A,TJ=150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qq Total Gate Charge (turn-on) - 430 640 Ic = 50A
Qge Gate - Emitter Charge (turn-on) - 48 72 n0 Vcc = 400V See Fig. 7
Qge Gate - Collector Charge (turn-on) - 130 190 VGE = 15V
tum) Turn-On Delay Time - 57 - Tu = 25°C
tr Rise Time - 80 - ns Ic = 60A, Vcc = 480V
td(ott) Turn-Off Delay Time - 240 - VGE = 15V, Rs = 5.09
k Fall Time - 120 - Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.41 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 2.51 - mJ
Ets Total Switching Loss - 2.92 4.4
tdmn) Turn-On Delay Time - 57 - To = 150°C,
tr Rise Time - 80 - ns Ic = 60A, Vcc = 480V
taott) Turn-Off Delay Time - 380 - VGE = 15V, Rs = 5.on
tf Fall Time - 170 - Energy losses include "tail" and
G Total Switching Loss - 4.78 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 2.0 - nH
Cies Input Capacitance - 7400 - VGE = 0V
Coes Output Capacitance - 730 - pF Vcc = 30V See Fig. 6
Cres Reverse Transfer Capacitance - 90 - f = 1.0MHz
tn Diode Reverse Recovery Time - 90 140 ns TJ = 25°C See Fig.
- 120 180 To = 125°C 13 IF = 50A
|rr Diode Peak Reverse Recovery Current - 7.3 11 A To = 25°C See Fig.
- 11 16 To = 125°C 14 VR = 200V
Q,, Diode Reverse Recovery Charge - 360 550 nC To = 25°C See Fig.
- 780 1200 TJ = 125°C 15 di/dt = 200Aps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 370 - Alps TJ = 25°C See Fig.
During tr, - 220 - TJ = 125°C 16
Details of note OD through © are on the page 7
