G20N60B3D ,40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodeapplications operating at moderate frequencies where low Econduction losses are essential.CGFormerl ..
G20N60B3D ,40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodefeatures of MOSFETs Short Circuit Ratedand bipolar transistors. The device has the high input imp ..
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G20N60B3D
40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG20N60B3D
40A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast DiodeThe HGTG20N60B3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25o C and 150o C. The
diode used in anti-parallel with the IGBT is the RHRP3060.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
Formerly developmental type TA49016.
Symbol
Features 40A, 600V at TC = 25oC Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC Short Circuit Rated Low Conduction Loss Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
Ordering InformationNOTE: When ordering, use the entire part number.
COLLECTOR
(BOTTOM SIDE METAL)
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
