FTM3725 ,NPN General Purpose AmplifierElectrical Characteristics T =25°C unless otherwise notedaSymbol Parameter Test Condition Min. Typ. ..
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FTM3725
NPN General Purpose Amplifier
FTM3725 FTM3725 B4 NPN Transistor E4 B4 E3 • This device is designed for high current, low impedance line driver B2 E2 applications. B1 C4 E1 • Sourced from process 26. C4 C4 C3 C2 C2 C1 C1 SOIC-16 Mark: FTM3725 Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 60 V CBO V Emitter-Base Voltage 6.0 V EBO I Collector Current - Continuous 1.2 A C T , T Operating and Storage Junction Temperature Range - 55 ~ 150 °C J STG * These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage * I = 10mA, I = 0 40 V (BR)CEO C B V Collector-Emitter Breakdown Voltage I = 10μA, V = 0 60 V (BR)CES C BE V Collector-Base Breakdown Voltage I = 10μA, I = 0 60 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10μA, I = 0 6.0 V (BR)EBO E C I Collector Cutoff Current V = 50V, I = 0 100 nA CBO CB E V = 50V, I = 0, T = 100°C 10 μA CB E a On Characteristics * h DC Current Gain I = 10mA, V = 1.0V 30 FE C CE I = 100mA, V = 1.0V 60 180 C CE I = 100mA, V = 1.0V, T = 55°C 30 C CE a I = 300mA, V = 1.0V 40 C CE I = 500mA, V = 1.0V 35 C CE I = 500mA, V = 1.0V, T = 55°C 20 C CE a I = 800mA, V = 2.0V 20 C CE I = 1.0mA, V = 5.0V 25 C CE V (sat) Collector-Emitter Saturation Voltage I = 10mA, I = 1.0mA 0.25 V CE C B I = 100mA, I = 10mA 0.26 V C B I = 300mA, I = 30mA 0.4 V C B I = 500mA, I = 50mA 0.52 V C B I = 800mA, I = 80mA 0.8 V C B I = 1.0mA, I = 100mA 0.95 V C B V (sat) Base-Emitter Saturation Voltage I = 10mA, I = 1.0mA 0.76 V BE C B I = 100mA, I = 10mA 0.86 V C B I = 300mA, I = 30mA 1.1 V C B I = 500mA, I = 50mA 1.2 V C B I = 800mA, I = 80mA 1.5 V C B I = 1.0mA, I = 100mA 1.7 V C B ©2004 Rev. B, June 2004
