FT5757M ,Silicon Darlington Transistor Array.
FUJITSU hT00El..ECTR0NICii 31.1: 1) = 371111752 001.50% 3 IFNI
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FT5763M ,Silicon Darlington Transistor ArrayFUJIT'SU M:CR0ELlr(yl'R0NTcS
January 1990
Edition 1.1
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FT5764M ,Silicon Darlington Transistor Array.
FUJITSU h1CR0El..ECTR0N1CS
January 1990
Edition 1.1
PRODUCT PROFILE
BLE D a 37H‘17EE ..
FT5766M ,Silicon Darlington Transistor ArrayFUJIT'SU M:CR0ELlr(yl'R0NTcS
January 1990
Edition 1.1
BLE I) E: 37H‘17EIE 00151:?”
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FT5767M ,Silicon Darlington Transistor Array.
FUJITSU h1CR0El..ECTR0N1CS
January 1990
Edition 1.1
PRODUCT PROFILE
BLE D a 37H‘17EE ..
FT600-1250-2 , New surface-mount fuse products for overcurrent protection of communications equipment
GF10G , SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
GF10K , SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
GF10M , SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
GF10NB60SD , N-channel 10A - 600V - TO-220FP PowerMESH TM IGBT
GF1A ,Surface Mount Glass Passivated Rectifier, Forward Current 1.0A®GF1A thru GF1MVishay Semiconductorsformerly General SemiconductorSurface Mount Glass Passivated Re ..
GF1D ,SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIERapplications0.226 (5.74)• High temperature metallurgically bonded construction0.196 (4.98)• Cavity- ..
FT5754M-FT5754M.-FT5757M
