FQU7N10 ,100V N-Channel MOSFETapplications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor contr ..
FQU7N10L ,100V LOGIC N-Channel MOSFETapplications such as highdirect operation from logic drivesefficiency switching DC/DC converters, a ..
FQU7P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -5.4A, -60V, R = 0.45Ω @V = -10 VDS(o ..
FQU7P06 ,60V P-Channel MOSFETFQD7P06 / FQU7P06May 2001TMQFETFQD7P06 / FQU7P0660V P-Channel MOSFET
FQU7P06TU ,60V P-Channel QFETFQD7P06 / FQU7P06May 2001TMQFETFQD7P06 / FQU7P0660V P-Channel MOSFET
FQU7P20 ,200V P-Channel MOSFET
G9965-25TGU ,mode Technology Inc - 1.5A Low Dropout Regulator with Enable
G9966 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
G9967 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
GA100NA60U ,600V UltraFast 10-30 kHz Single IGBT in a SOT-227 packageFeatures3TM• UltraFast : Optimized for minimum saturationV = 600V2 CES voltage and operating fre ..
GA100TS60SQ ,600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V• Generation 4 Standard Speed IGBT CESTechnologyI = 220A DC • QuietIR Antiparallel ..
GA100TS60U ,600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V Generation 4 IGBT technology CES UltraFast: Optimized for high operating frequ ..
FQU7N10
100V N-Channel MOSFET
FQD7N10 / FQU7N10 December 2000 TM QFET QFET QFET QFET FQD7N10 / FQU7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 100V, R = 0.35Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. D D ! ! "" !!"" "" G! ! "" D-PAK I-PAK G S G FQD Series FQU Series D S ! ! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD7N10 / FQU7N10 Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 5.8 A D C - Continuous (T = 100°C) 3.67 A C I (Note 1) Drain Current - Pulsed 23.2 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 50 mJ AS I Avalanche Current (Note 1) 5.8 A AR E (Note 1) Repetitive Avalanche Energy 2.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 25 W C - Derate above 25°C 0.2 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 5.0 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A2, December 2000
