FQU3N60 ,600V N-Channel MOSFET
FQU4P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -3.1A, -250V, R = 2.1Ω @V = -10 VDS(o ..
FQU5N40TU ,400V N-Channel QFET
FQU5N60CTU ,600V N-Channel Advance QFET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 2.8A, 600V, R = 2.5Ω @V = 10 VDS(on) ..
FQU5P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQU5P20 ,200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effect
G9965-25TGU ,mode Technology Inc - 1.5A Low Dropout Regulator with Enable
G9966 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
G9967 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
GA100NA60U ,600V UltraFast 10-30 kHz Single IGBT in a SOT-227 packageFeatures3TM• UltraFast : Optimized for minimum saturationV = 600V2 CES voltage and operating fre ..
GA100TS60SQ ,600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V• Generation 4 Standard Speed IGBT CESTechnologyI = 220A DC • QuietIR Antiparallel ..
GA100TS60U ,600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V Generation 4 IGBT technology CES UltraFast: Optimized for high operating frequ ..
FQU3N60
600V N-Channel MOSFET
