FQU10N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQU11P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -9.4A, -60V, R = 0.185Ω @V = -10 VDS( ..
FQU12P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQU13N06 ,60V N-Channel MOSFETapplications such as DC/DCconverters, high efficiency switching for powermanagement in portable and ..
FQU13N06L ,60V LOGIC N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQU13N06LTU ,60V N-Channel Logic level QFETFeaturesThese N-Channel enhancement mode power field effect • 11A, 60V, R = 0.115Ω @V = 10 VDS(on) ..
G9965-25TGU ,mode Technology Inc - 1.5A Low Dropout Regulator with Enable
G9966 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
G9967 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
GA100NA60U ,600V UltraFast 10-30 kHz Single IGBT in a SOT-227 packageFeatures3TM• UltraFast : Optimized for minimum saturationV = 600V2 CES voltage and operating fre ..
GA100TS60SQ ,600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V• Generation 4 Standard Speed IGBT CESTechnologyI = 220A DC • QuietIR Antiparallel ..
GA100TS60U ,600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V Generation 4 IGBT technology CES UltraFast: Optimized for high operating frequ ..
FQU10N20L
200V LOGIC N-Channel MOSFET
FQD10N20L / FQU10N20L December 2000 TM QFET QFET QFET QFET FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.6A, 200V, R = 0.36Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are Low level gate drive requirement allowing direct well suited for high efficiency switching DC/DC converters, operation from logic drivers switch mode power supplies, and motor control. D D ! ! "" !!"" "" G! ! "" D-PAK I-PAK G S G FQD Series FQU Series D S ! ! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD10N20L / FQU10N20L Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 7.6 A D C - Continuous (T = 100°C) 4.8 A C I (Note 1) Drain Current - Pulsed 30.4 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 180 mJ AS I Avalanche Current (Note 1) 7.6 A AR E (Note 1) Repetitive Avalanche Energy 5.1 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 51 W C - Derate above 25°C 0.4 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.48 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A2, December 2000
