FQT4N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.85A, 200V, R = 1.35Ω @V = 10 VDS(on ..
FQT4N20LTF ,200V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect • 0.85A, 200V, R = 1.35Ω @V = 10 VDS(on ..
FQT4N20TF ,200V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 0.85A, 200V, R = 1.4Ω @V = 10 VDS(on) ..
FQT4N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.83A, 250V, R = 1.75Ω @V = 10 VDS(on ..
FQT5P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQT5P10TF ,100V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
G9965-25TGU ,mode Technology Inc - 1.5A Low Dropout Regulator with Enable
G9966 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
G9967 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
GA100NA60U ,600V UltraFast 10-30 kHz Single IGBT in a SOT-227 packageFeatures3TM• UltraFast : Optimized for minimum saturationV = 600V2 CES voltage and operating fre ..
GA100TS60SQ ,600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V• Generation 4 Standard Speed IGBT CESTechnologyI = 220A DC • QuietIR Antiparallel ..
GA100TS60U ,600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V Generation 4 IGBT technology CES UltraFast: Optimized for high operating frequ ..
FQT4N20L
200V LOGIC N-Channel MOSFET
FQT4N20L May 2001 TM QFET FQT4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.85A, 200V, R = 1.35Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • Low level gate drive requirement allowing direct suited for high efficiency switching DC/DC converters, opration from logic drivers switch mode power supply, DC-AC converters for uninterrupted power supply, motor control. D ! ! D "" !!"" "" G! ! S "" G SOT-223 ! ! S FQT Series Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQT4N20L Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 0.85 A D C - Continuous (T = 70°C) 0.68 A C I (Note 1) Drain Current - Pulsed 3.4 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 52 mJ AS I Avalanche Current (Note 1) 0.85 A AR E (Note 1) Repetitive Avalanche Energy 0.22 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 2.2 W D C - Derate above 25°C 0.018 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Ambient * -- 57 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A, May 2001
