FQT2P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -0.55A, -250V, R = 4.0Ω @V = 10 VDS(o ..
FQT3P20 ,200V P-Channel MOSFETFeaturestransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.• -0. ..
FQT3P20TF ,200V P-Channel QFETGeneral DescriptionThese P-Channel enhancement mode power field effect
FQT4N20 ,200V N-Channel MOSFETFQT4N20May 2001TMQFETFQT4N20200V N-Channel MOSFET
FQT4N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.85A, 200V, R = 1.35Ω @V = 10 VDS(on ..
FQT4N20LTF ,200V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect • 0.85A, 200V, R = 1.35Ω @V = 10 VDS(on ..
G965-25ADJP1UF ,mode Technology Inc - 1.5A Low Dropout Regulator with Enable
G9965-25TGU ,mode Technology Inc - 1.5A Low Dropout Regulator with Enable
G9966 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
G9967 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
GA100NA60U ,600V UltraFast 10-30 kHz Single IGBT in a SOT-227 packageFeatures3TM• UltraFast : Optimized for minimum saturationV = 600V2 CES voltage and operating fre ..
GA100TS60SQ ,600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V• Generation 4 Standard Speed IGBT CESTechnologyI = 220A DC • QuietIR Antiparallel ..
FQT2P25
250V P-Channel MOSFET
FQT2P25 May 2001 TM QFET FQT2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -0.55A, -250V, R = 4.0Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • Improved dv/dt capability performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. S !!!! !!!! D ● ● ● ● ● ● ● ● G!!!! ● ● ● ● ● ● ● ● !!!! ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ S ● ● ● ● ● ● ● ● G SOT-223 !!!!!!!! FQT Series D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQT2P25 Units V Drain-Source Voltage -250 V DSS I - Continuous (T = 25°C) Drain Current -0.55 A D C - Continuous (T = 100°C) -0.35 A C I (Note 1) Drain Current - Pulsed -2.2 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 120 mJ AS I Avalanche Current (Note 1) -0.55 A AR E (Note 1) Repetitive Avalanche Energy 0.25 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns P Power Dissipation (T = 25°C) 2.5 W D C - Derate above 25°C 0.02 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A, May 2001
