FQT1N60C ,N-Channel QFET?MOSFET 600V, 0.2A, 11.5?FeaturesThis N-Channel enhancement mode power MOSFET is •0.2 A, 600 V, R =9.3 Ω(.)7\S @V =10 V, I = ..
FQT1N80TF-WS , N-Channel MOSFET
FQT2P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -0.55A, -250V, R = 4.0Ω @V = 10 VDS(o ..
FQT3P20 ,200V P-Channel MOSFETFeaturestransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.• -0. ..
FQT3P20TF ,200V P-Channel QFETGeneral DescriptionThese P-Channel enhancement mode power field effect
FQT4N20 ,200V N-Channel MOSFETFQT4N20May 2001TMQFETFQT4N20200V N-Channel MOSFET
G965-25ADJP1UF ,mode Technology Inc - 1.5A Low Dropout Regulator with Enable
G9965-25TGU ,mode Technology Inc - 1.5A Low Dropout Regulator with Enable
G9966 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
G9967 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
GA100NA60U ,600V UltraFast 10-30 kHz Single IGBT in a SOT-227 packageFeatures3TM• UltraFast : Optimized for minimum saturationV = 600V2 CES voltage and operating fre ..
GA100TS60SQ ,600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V• Generation 4 Standard Speed IGBT CESTechnologyI = 220A DC • QuietIR Antiparallel ..
FQT1N60C
N-Channel QFET?MOSFET 600V, 0.2A, 11.5?
FQT1N60C N-Channel MOSFET March 2013 FQT1N60C ® N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description Features This N-Channel enhancement mode power MOSFET is • 0.2 A, 600 V, R =9.3 Ω(7\S.)@V =10 V, I =0.1 A D DS(on) GS ® produced using Fairchild Semiconductor ’s proprietary • Low Gate Charge (Typ. nC) planar stripe and DMOS technology. This advanced • Low C (Typ. pF) rss MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior • 100% Avalanche Tested switching performance and high avalanche energy RoHS Compliant • strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D S G G SOT-223 S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FQT1N60C Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage ±30 V GSS o -Continuous (T = 25 C) 0.2 C I Drain Current A D o -Continuous (T = 100 C) 0.12 C I Drain Current - Pulsed (Note 1) 0.8 A DM E Single Pulsed Avalanche Energy (Note 2) 33 mJ AS I Avalanche Current (Note 1) 0.2 A AR E Repetitive Avalanche Energy (Note 1) 0.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 2.1 W C P Power Dissipation D o o - Derate above 25C0.02W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter Unit Min. Max. o R Thermal Resistance, Junction to Ambient* - 60 C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2007 1 FQT1N60C Rev. C0
