FQPF9P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 0.62Ω @V = -10 VDS( ..
FQS4903TF ,500V Dual N-Channel QFET
FQT13N06L ,60V LOGIC N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQT13N06LTF ,60V N-Channel Logic level QFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQT13N06TF ,60V N-Channel QFETapplications such as DC/DCconverters, high efficiency switching for powermanagement in portable and ..
FQT1N60C ,N-Channel QFET?MOSFET 600V, 0.2A, 11.5?FeaturesThis N-Channel enhancement mode power MOSFET is •0.2 A, 600 V, R =9.3 Ω(.)7\S @V =10 V, I = ..
G965-25ADJP1UF ,mode Technology Inc - 1.5A Low Dropout Regulator with Enable
G9965-25TGU ,mode Technology Inc - 1.5A Low Dropout Regulator with Enable
G9966 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
G9967 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
GA100NA60U ,600V UltraFast 10-30 kHz Single IGBT in a SOT-227 packageFeatures3TM• UltraFast : Optimized for minimum saturationV = 600V2 CES voltage and operating fre ..
GA100TS60SQ ,600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V• Generation 4 Standard Speed IGBT CESTechnologyI = 220A DC • QuietIR Antiparallel ..
FQPF9P25
250V P-Channel MOSFET
FQPF9P25 December 2000 TM QFET QFET QFET QFET FQPF9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -6.0A, -250V, R = 0.62Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand a high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters. S !!!!!!!! ●●●● ●●●● G!!!!!!!! ●●●●●●●● ▶▶▶▶ ▶▶▶▶ ▲▲▲▲▲▲▲▲ ●●●● ●●●● G D S TO-220F !!!! !!!! D FQPF Series Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP9P25 Units V Drain-Source Voltage -250 V DSS I - Continuous (T = 25°C) Drain Current -6.0 A D C - Continuous (T = 100°C) -3.9 A C I (Note 1) Drain Current - Pulsed -24 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 650 mJ AS I Avalanche Current (Note 1) -6.0 A AR E (Note 1) Repetitive Avalanche Energy 5.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns P Power Dissipation (T = 25°C) 50 W D C - Derate above 25°C 0.4 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.5 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A2, December 2000
