FQPF7N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 4.3A, 600V, R = 1.0Ω @V = 10 VDS(on) ..
FQPF7N80 ,800V N-Channel MOSFET
FQPF7N80 ,800V N-Channel MOSFET
FQPF85N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQPF8N60C ,600V N-Channel Advance Q-FET C-SeriesFQP8N60C/FQPF8N60C®QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFET
FQPF8N60CF ,N-Channel QFET?FRFET?MOSFET 600V, 6.26A, 1.5?FeaturesDescriptionThis N-Channel enhancement mode power MOSFET is • 7.5 A, 600 V, R = 1.2 Ω(Max.) ..
G952T24UF ,mode Technology Inc - 1.8V 1A Regulator
G952T43U ,mode Technology Inc - 1.8V 1A Regulator
G952T63U ,mode Technology Inc - 1.8V 1A Regulator
G952T65U ,mode Technology Inc - 1.8V 1A Regulator
G952T65UF ,mode Technology Inc - 1.8V 1A Regulator
G957T65UF ,mode Technology Inc - 1.5V 1A Regulator
FQPF7N60
600V N-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQPF7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.3A, 600V, R = 1.0Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D ! ! "" !!"" "" G! ! "" G D S TO-220F ! ! S FQPF Series Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQPF7N60 Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 4.3 A D C - Continuous (T = 100°C) 2.7 A C I (Note 1) Drain Current - Pulsed 17.2 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 580 mJ AS I Avalanche Current (Note 1) 4.3 A AR E (Note 1) Repetitive Avalanche Energy 4.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 48 W D C - Derate above 25°C 0.38 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.60 °C�W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C�W θJA ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQPF7N60
