FQPF6N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.3A, 800V, R = 1.95Ω @V = 10 VDS(on) ..
FQPF6N80C ,800V N-Channel Advance Q-FET C-Series
FQPF6N80C ,800V N-Channel Advance Q-FET C-Series
FQPF6N80C ,800V N-Channel Advance Q-FET C-Series
FQPF6N90 ,QFET N-CHANNELFEATURESBV = 900VDSS• Advanced New DesignR = 1.9ΩDS(ON)• Avalanche Rugged TechnologyI = 3.4AD• Rugg ..
FQPF6P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -4.2A, -250V, R = 1.1Ω @V = -10 VDS(o ..
G950T45U , 2.5V 1A Regulator
G952T24UF ,mode Technology Inc - 1.8V 1A Regulator
G952T43U ,mode Technology Inc - 1.8V 1A Regulator
G952T63U ,mode Technology Inc - 1.8V 1A Regulator
G952T65U ,mode Technology Inc - 1.8V 1A Regulator
G952T65UF ,mode Technology Inc - 1.8V 1A Regulator
FQPF6N80
800V N-Channel MOSFET
September 2000 TM QFET FQPF6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 800V, R = 1.95Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D ! ! "" 33 55 "" G! ! "" G D S TO-220F ! ! S FQPF Series Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQPF6N80 Units V Drain-Source Voltage 800 V DSS I - Continuous (T = 25°C) Drain Current 3.3 A D C - Continuous (T = 100°C) 2.1 A C I (Note 1) Drain Current - Pulsed 13.2 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 680 mJ AS I Avalanche Current (Note 1) 3.3 A AR E (Note 1) Repetitive Avalanche Energy 5.1 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation (T = 25°C) 51 W D C - Derate above 25°C 0.41 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.45 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A, September 2000 FQPF6N80
