FQPF30N06L ,60V LOGIC N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQPF30N06L ,60V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 22.5A, 60V, R = 0.035Ω @V = 10 VDS(on ..
FQPF32N12V2 ,120V N-Channel Advanced QFET V2 seriesapplications lowest Rds(on) is required.D!!!!!!!!● ● ● ● ● ● ● ●◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀▲ ▲ ▲ ▲▲ ▲ ▲ ▲● ● ● ..
FQPF32N20C ,200V N-Channel Advance Q-FET C-SeriesFQP32N20C/FQPF32N20C®QFETFQP32N20C/FQPF32N20C200V N-Channel MOSFET
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FQPF33N10L ,100V LOGIC N-Channel MOSFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D! !""!!""""G! ..
G914D ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914DF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914G ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914GF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
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FQPF30N06L
60V LOGIC N-Channel MOSFET
FQPF30N06L May 2001 TM QFET FQPF30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 22.5A, 60V, R = 0.035Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 50 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D ! ! "" !!"" "" G! ! "" G D S TO-220F ! ! S FQPF Series Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQPF30N06L Units V Drain-Source Voltage 60 V DSS I - Continuous (T = 25°C) Drain Current 22.5 A D C - Continuous (T = 100°C) 15.9 A C I (Note 1) Drain Current - Pulsed 90 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 350 mJ AS I Avalanche Current (Note 1) 22.5 A AR E (Note 1) Repetitive Avalanche Energy 3.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns P Power Dissipation (T = 25°C) 38 W D C - Derate above 25°C 0.25 W/°C T , T Operating and Storage Junction Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.9 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2001 Rev. A1. May 2001
