FQPF2P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -1.8A, -250V, R = 4.0Ω @V = -10 VDS(o ..
FQPF30N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQPF30N06L ,60V LOGIC N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQPF30N06L ,60V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 22.5A, 60V, R = 0.035Ω @V = 10 VDS(on ..
FQPF32N12V2 ,120V N-Channel Advanced QFET V2 seriesapplications lowest Rds(on) is required.D!!!!!!!!● ● ● ● ● ● ● ●◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀▲ ▲ ▲ ▲▲ ▲ ▲ ▲● ● ● ..
FQPF32N20C ,200V N-Channel Advance Q-FET C-SeriesFQP32N20C/FQPF32N20C®QFETFQP32N20C/FQPF32N20C200V N-Channel MOSFET
G914CF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914D ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914DF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914G ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914GF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914HF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
FQPF2P25
250V P-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQPF2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -1.8A, -250V, R = 4.0Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. S !!!! !!!! �������� G ���� !!!!!!!! ���� �������� �������� �������� G D S !!!!!!!! TO-220F D FQPF Series Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQPF2P25 Units V Drain-Source Voltage -250 V DSS I - Continuous (T = 25°C) Drain Current -1.8 A D C - Continuous (T = 100°C) -1.14 A C I (Note 1) Drain Current - Pulsed -7.2 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 120 mJ AS I Avalanche Current (Note 1) -1.8 A AR E (Note 1) Repetitive Avalanche Energy 3.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns P Power Dissipation (T = 25°C) 32 W D C - Derate above 25°C 0.26 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.9 °C�W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C�W θJA ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQPF2P25
