FQPF1N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 0.9A, 600V, R = 11.5Ω @V = 10 VDS(on) ..
FQPF20N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQPF20N06 ,60V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 15A, 60V, R = 0.06Ω @V = 10 VDS(on) G ..
FQPF20N06L ,60V LOGIC N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQPF22N30 ,300V N-Channel MOSFET
FQPF22N30 ,300V N-Channel MOSFET
G9131-33T73U ,mode Technology Inc - 300mA Low-Dropout Linear Regulators
G914C ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914CF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914D ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914DF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914G ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
FQPF1N60
600V N-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQPF1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.9A, 600V, R = 11.5Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D ! ! "" !!"" "" G! ! "" G D S TO-220F ! ! FQPF Series S Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQPF1N60 Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 0.9 A D C - Continuous (T = 100°C) 0.57 A C I (Note 1) Drain Current - Pulsed 3.6 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 50 mJ AS I Avalanche Current (Note 1) 0.9 A AR E (Note 1) Repetitive Avalanche Energy 2.1 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 21 W D C - Derate above 25°C 0.17 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 5.95 °C�W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C�W θJA ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQPF1N60
