FQPF18N50V2 ,500V N-Channel MOSFETFQP18N50V2/FQPF18N50V2TMQFETFQP18N50V2/FQPF18N50V2500V N-Channel MOSFET
FQPF19N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQPF19N20 ,200V N-Channel MOSFET
FQPF19N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 19.0A, 200V, R = 0.17Ω @V = 10 VDS(on ..
FQPF19N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 19.0A, 200V, R = 0.17Ω @V = 10 VDS(on ..
FQPF1N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 0.9A, 600V, R = 11.5Ω @V = 10 VDS(on) ..
G9131-33T73U ,mode Technology Inc - 300mA Low-Dropout Linear Regulators
G914C ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914CF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914D ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914DF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914G ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
FQPF18N50V2
500V N-Channel MOSFET
FQP18N50V2/FQPF18N50V2 TM QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 500V, R = 0.265Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● TO-220 TO-220F G D S G D S FQP Series FQPF Series !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP18N50V2 FQPF18N50V2 Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 18 18 A D C - Continuous (T = 100°C) 12.1 12.1 A C I (Note 1) Drain Current - Pulsed 72 72 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 330 mJ AS I Avalanche Current (Note 1) 18 A AR E (Note 1) Repetitive Avalanche Energy 25 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 208 69 W D C - Derate above 25°C 1.67 0.55 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter FQP18N50V2 FQPF18N50V2 Units R Thermal Resistance, Junction-to-Case 0.6 1.8 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2002 Rev. B, August 2002
