FQP8P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
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FQP8P10
100V P-Channel MOSFET
FQP8P10 TM QFET FQP8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -8.0A, -100V, R = 0.53Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D G TO-220 GS D FQP Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP8P10 Units V Drain-Source Voltage -100 V DSS I - Continuous (T = 25°C) Drain Current -8.0 A D C - Continuous (T = 100°C) -5.7 A C I (Note 1) Drain Current - Pulsed -32 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 150 mJ AS I Avalanche Current (Note 1) -8.0 A AR E (Note 1) Repetitive Avalanche Energy 6.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns P Power Dissipation (T = 25°C) 65 W D C - Derate above 25°C 0.43 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.31 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2002 Rev. B, August 2002
