FQP45N15V2 ,150V N-Channel Advanced QFET V2 seriesFeaturesThese N-Channel enhancement mode power field effect 45A, 150V, R = 0.04Ω @V = 10 VDS(on) ..
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FQP45N15V2-FQPF45N15V2
150V N-Channel Advanced QFET V2 series
FQP45N15V2/FQPF45N15V2 ® QFET FQP45N15V2/FQPF45N15V2 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 45A, 150V, R = 0.04Ω @V = 10 V DS(on) GS transistors are produced using Fairchilds proprietary, Low gate charge ( typical 72 nC) planar stripe, DMOS technology. Low Crss ( typical 135 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required. D !!!!!!!! ● ●● ● ● ●● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲▲▲▲▲▲▲▲ ● ●● ● ● ●● ● G!!!!!!!! ● ● ● ●● ● ● ● TO-220 TO-220F G D S G D S !!!!!!!! FQP FQPF S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP45N15V2 FQPF45N15V2 Units V Drain-Source Voltage 150 V DSS I - Continuous (T = 25°C) Drain Current 45 45 * A D C - Continuous (T = 100°C) 31 31 * A C I (Note 1) Drain Current - Pulsed 180 180 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 1124 mJ AS I Avalanche Current (Note 1) 45 A AR E (Note 1) Repetitive Avalanche Energy 22 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 220 66 W D C - Derate above 25°C 1.47 0.44 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP45N15V2 FQPF45N15V2 Units R Thermal Resistance, Junction-to-Case 0.68 2.25 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2004 Rev. A, October 2004
