FQP44N10 ,100V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 43.5A, 100V, R = 0.039Ω @V = 10 VDS(o ..
FQP44N10F , 100V N-Channel MOSFET
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FQP45N15V2 ,150V N-Channel Advanced QFET V2 seriesFeaturesThese N-Channel enhancement mode power field effect 45A, 150V, R = 0.04Ω @V = 10 VDS(on) ..
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FQP4N20 ,200V N-Channel MOSFET
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FQP44N10
100V N-Channel MOSFET
FQP44N10 December 2000 TM QFET QFET QFET QFET FQP44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 43.5A, 100V, R = 0.039Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are 175°C maximum junction temperature rating well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. D ! ! "" !!"" "" G! ! "" G D TO-220 S ! ! FQP Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP44N10 Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 43.5 A D C - Continuous (T = 100°C) 30.8 A C I (Note 1) Drain Current - Pulsed 174 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 530 mJ AS I Avalanche Current (Note 1) 43.5 A AR E (Note 1) Repetitive Avalanche Energy 14.6 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25°C) 146 W D C - Derate above 25°C 0.97 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.03 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A2, December 2000
