FQP3P50 ,500V P-Channel MOSFETAugust 2000TMQFET QFET QFET QFETFQP3P50500V P-Channel MOSFET
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FQP44N10 ,100V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 43.5A, 100V, R = 0.039Ω @V = 10 VDS(o ..
FQP44N10F , 100V N-Channel MOSFET
FQP45N03L ,30V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 45A, 30V, R = 0.018Ω @V = 10 VDS(on) ..
FQP45N15V2 ,150V N-Channel Advanced QFET V2 seriesFeaturesThese N-Channel enhancement mode power field effect 45A, 150V, R = 0.04Ω @V = 10 VDS(on) ..
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FQP3P50
500V P-Channel MOSFET
August 2000 TM QFET QFET QFET QFET FQP3P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -2.7A, -500V, R = 4.9Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge. S !!!!!!!! ●●●● ●●●● G!!!!!!!! ●●●●●●●● ▶▶▶▶ ▶▶▶▶ ▲▲▲▲▲▲▲▲ ●●●● ●●●● TO-220 !!!! G D S !!!! FQP Series D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP3P50 Units V Drain-Source Voltage -500 V DSS I - Continuous (T = 25°C) Drain Current -2.7 A D C - Continuous (T = 100°C) -1.71 A C I (Note 1) Drain Current - Pulsed -10.8 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 250 mJ AS I Avalanche Current (Note 1) -2.7 A AR E (Note 1) Repetitive Avalanche Energy 8.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -4.5 V/ns P Power Dissipation (T = 25°C) 85 W D C - Derate above 25°C 0.68 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.47 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A, August 2000 FQP3P50
